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SI5517DU-T1-GE3
- Varenummer:
- SI5517DU-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N/P-CH 20V 6A CHIPFET
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18561 Pieces
- Datablad:
- SI5517DU-T1-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Leverandør Device Package: | PowerPAK® ChipFet Dual |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4.4A, 4.5V |
| Strøm - Max: | 8.3W |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® ChipFET™ Dual |
| Andre navne: | SI5517DU-T1-GE3TR SI5517DUT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 15 Weeks |
| Producentens varenummer: | SI5517DU-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 8V |
| FET Type: | N and P-Channel |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N/P-CH 20V 6A CHIPFET |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A |
| Email: | [email protected] |
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