Købe SI7980DP-T1-GE3 med BYCHPS
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SI7980DP-T1-GE3
- Varenummer:
- SI7980DP-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET 2N-CH 20V 8A PPAK SO-8
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19096 Pieces
- Datablad:
- SI7980DP-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI7980DP-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI7980DP-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Leverandør Device Package: | PowerPAK® SO-8 Dual |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 5A, 10V |
| Strøm - Max: | 19.8W, 21.9W |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® SO-8 Dual |
| Andre navne: | SI7980DP-T1-GE3TR SI7980DPT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SI7980DP-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1010pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET-funktion: | Standard |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Half Bridge) 20V 8A 19.8W, 21.9W Surface Mount PowerPAK® SO-8 Dual |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET 2N-CH 20V 8A PPAK SO-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8A |
| Email: | [email protected] |
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