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SI8429DB-T1-E1
- Varenummer:
- SI8429DB-T1-E1
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 8V 11.7A 2X2 4-MFP
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12495 Pieces
- Datablad:
- SI8429DB-T1-E1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI8429DB-T1-E1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI8429DB-T1-E1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 800mV @ 250µA |
|---|---|
| Vgs (Max): | ±5V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-Microfoot |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 1A, 4.5V |
| Power Dissipation (Max): | 2.77W (Ta), 6.25W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 4-XFBGA, CSPBGA |
| Andre navne: | SI8429DB-T1-E1TR SI8429DBT1E1 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | SI8429DB-T1-E1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1640pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot |
| Drevspænding (Maks. Rds On, Min Rds On): | 1.2V, 4.5V |
| Afløb til Source Voltage (VDSS): | 8V |
| Beskrivelse: | MOSFET P-CH 8V 11.7A 2X2 4-MFP |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.7A (Tc) |
| Email: | [email protected] |
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