Købe SI8902EDB-T2-E1 med BYCHPS
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SI8902EDB-T2-E1
- Varenummer:
- SI8902EDB-T2-E1
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET 2N-CH 20V 3.9A 6-MFP
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14751 Pieces
- Datablad:
- SI8902EDB-T2-E1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI8902EDB-T2-E1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI8902EDB-T2-E1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 1V @ 980µA |
|---|---|
| Leverandør Device Package: | 6-Micro Foot™ |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | - |
| Strøm - Max: | 1W |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 6-MICRO FOOT®CSP |
| Andre navne: | SI8902EDB-T2-E1TR SI8902EDBT2E1 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SI8902EDB-T2-E1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | 2 N-Channel (Dual) Common Drain |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 3.9A 1W Surface Mount 6-Micro Foot™ |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET 2N-CH 20V 3.9A 6-MFP |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.9A |
| Email: | [email protected] |
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