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SI9424BDY-T1-GE3
- Varenummer:
- SI9424BDY-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 20V 5.6A 8SOIC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14134 Pieces
- Datablad:
- SI9424BDY-T1-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 850mV @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-SO |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.1A, 4.5V |
| Power Dissipation (Max): | 1.25W (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SI9424BDY-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 20V 5.6A (Ta) 1.25W (Ta) Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET P-CH 20V 5.6A 8SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5.6A (Ta) |
| Email: | [email protected] |
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