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SIB419DK-T1-GE3
- Varenummer:
- SIB419DK-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 12V 9A SC75-6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14884 Pieces
- Datablad:
- SIB419DK-T1-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SC-75-6L Single |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 5.2A, 4.5V |
| Power Dissipation (Max): | 2.45W (Ta), 13.1W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® SC-75-6L |
| Andre navne: | SIB419DK-T1-GE3TR SIB419DKT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SIB419DK-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 562pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 11.82nC @ 5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 12V 9A (Tc) 2.45W (Ta), 13.1W (Tc) Surface Mount PowerPAK® SC-75-6L Single |
| Afløb til Source Voltage (VDSS): | 12V |
| Beskrivelse: | MOSFET P-CH 12V 9A SC75-6 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9A (Tc) |
| Email: | [email protected] |
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