Købe SIE726DF-T1-GE3 med BYCHPS
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| Vgs (th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 10-PolarPAK® (L) |
| Serie: | SkyFET®, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 25A, 10V |
| Power Dissipation (Max): | 5.2W (Ta), 125W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | 10-PolarPAK® (L) |
| Andre navne: | SIE726DF-T1-GE3CT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SIE726DF-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 7400pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 60A POLARPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |