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SIHU6N65E-GE3
- Varenummer:
- SIHU6N65E-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 650V 6A IPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16407 Pieces
- Datablad:
- SIHU6N65E-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIHU6N65E-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIHU6N65E-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | IPAK (TO-251) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3A, 10V |
| Power Dissipation (Max): | 78W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Long Leads, IPak, TO-251AB |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 19 Weeks |
| Producentens varenummer: | SIHU6N65E-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 820pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 6A IPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7A (Tc) |
| Email: | [email protected] |
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