Købe SIR626DP-T1-RE3 med BYCHPS
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SIR626DP-T1-RE3
- Varenummer:
- SIR626DP-T1-RE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 60V 100A SO8
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13387 Pieces
- Datablad:
- SIR626DP-T1-RE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIR626DP-T1-RE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIR626DP-T1-RE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.4V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SO-8 |
| Serie: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 104W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® SO-8 |
| Andre navne: | SIR626DP-T1-RE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 19 Weeks |
| Producentens varenummer: | SIR626DP-T1-RE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5130pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 7.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8 |
| Drevspænding (Maks. Rds On, Min Rds On): | 6V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N-CH 60V 100A SO8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
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