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SIS427EDN-T1-GE3
- Varenummer:
- SIS427EDN-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 30V 50A 1212-8
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12531 Pieces
- Datablad:
- SIS427EDN-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIS427EDN-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIS427EDN-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±25V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® 1212-8 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 10.6 mOhm @ 11A, 10V |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® 1212-8 |
| Andre navne: | SIS427EDN-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SIS427EDN-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1930pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
| Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET P-CH 30V 50A 1212-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
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