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SIUD412ED-T1-GE3
- Varenummer:
- SIUD412ED-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 12V 500MA 0806
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19111 Pieces
- Datablad:
- SIUD412ED-T1-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 900mV @ 250µA |
|---|---|
| Vgs (Max): | ±5V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® 0806 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 340 mOhm @ 500mA, 4.5V |
| Power Dissipation (Max): | 1.25W (Ta) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | PowerPAK® 0806 |
| Andre navne: | SIUD412ED-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | SIUD412ED-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 21pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.71nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806 |
| Drevspænding (Maks. Rds On, Min Rds On): | 1.2V, 4.5V |
| Afløb til Source Voltage (VDSS): | 12V |
| Beskrivelse: | MOSFET N-CH 12V 500MA 0806 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 500mA (Tc) |
| Email: | [email protected] |
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