Købe SPB02N60C3ATMA1 med BYCHPS
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| Vgs (th) (Max) @ Id: | 3.9V @ 80µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-3-2 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
| Power Dissipation (Max): | 25W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | SP000013516 SPB02N60C3 SPB02N60C3INTR SPB02N60C3INTR-ND SPB02N60C3XT SPB02N60C3XT-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SPB02N60C3ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2 |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 1.8A D2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.8A (Tc) |
| Email: | [email protected] |