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Vgs (th) (Max) @ Id: | 3.9V @ 1mA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO263-3-2 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 11A, 10V |
Power Dissipation (Max): | 227W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andre navne: | SP000013370 SPB17N80C3ATMA1 SPB17N80C3INTR SPB17N80C3T SPB17N80C3XT SPB17N80C3XTINTR SPB17N80C3XTINTR-ND |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 8 Weeks |
Producentens varenummer: | SPB17N80C3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 2300pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 177nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 800V 17A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 800V |
Beskrivelse: | MOSFET N-CH 800V 17A D2PAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 17A (Tc) |
Email: | [email protected] |