Købe SPB80P06P G med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 5.5mA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO263-3-2 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 64A, 10V |
Power Dissipation (Max): | 340W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andre navne: | SP000096088 SPB80P06P G-ND SPB80P06PG SPB80P06PGATMA1 SPB80P06PGINTR SPB80P06PGXT |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | SPB80P06P G |
Inputkapacitans (Ciss) (Max) @ Vds: | 5033pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | P-Channel 60V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET P-CH 60V 80A TO-263 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
Email: | [email protected] |