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		| Vgs (th) (Max) @ Id: | 3.9V @ 470µA | 
|---|---|
| Vgs (Max): | ±20V | 
| Teknologi: | MOSFET (Metal Oxide) | 
| Leverandør Device Package: | PG-TO262-3-1 | 
| Serie: | CoolMOS™ | 
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5.1A, 10V | 
| Power Dissipation (Max): | 104W (Tc) | 
| Emballage: | Tube | 
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA | 
| Andre navne: | SP000014819  SP000683148 SPI08N80C3-ND SPI08N80C3IN SPI08N80C3X SPI08N80C3XK SPI08N80C3XKSA1  | 
| Driftstemperatur: | -55°C ~ 150°C (TJ) | 
| Monteringstype: | Through Hole | 
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) | 
| Fabrikantens standard ledetid: | 6 Weeks | 
| Producentens varenummer: | SPI08N80C3 | 
| Inputkapacitans (Ciss) (Max) @ Vds: | 1100pF @ 100V | 
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V | 
| FET Type: | N-Channel | 
| FET-funktion: | - | 
| Udvidet beskrivelse: | N-Channel 800V 8A (Tc) 104W (Tc) Through Hole PG-TO262-3-1 | 
| Drevspænding (Maks. Rds On, Min Rds On): | 10V | 
| Afløb til Source Voltage (VDSS): | 800V | 
| Beskrivelse: | MOSFET N-CH 800V 8A TO-262 | 
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8A (Tc) | 
| Email: | [email protected] |