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		| Vgs (th) (Max) @ Id: | 4V @ 250µA | 
|---|---|
| Teknologi: | MOSFET (Metal Oxide) | 
| Leverandør Device Package: | PG-TO262-3-1 | 
| Serie: | OptiMOS™ | 
| Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 80A, 10V | 
| Power Dissipation (Max): | 300W (Tc) | 
| Emballage: | Tube | 
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA | 
| Andre navne: | SP000013717  SPI80N08S207R  | 
| Driftstemperatur: | -55°C ~ 175°C (TJ) | 
| Monteringstype: | Through Hole | 
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) | 
| Producentens varenummer: | SPI80N08S2-07R | 
| Inputkapacitans (Ciss) (Max) @ Vds: | 5830pF @ 25V | 
| Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V | 
| FET Type: | N-Channel | 
| FET-funktion: | - | 
| Udvidet beskrivelse: | N-Channel 75V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1 | 
| Afløb til Source Voltage (VDSS): | 75V | 
| Beskrivelse: | MOSFET N-CH 75V 80A I2PAK | 
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) | 
| Email: | [email protected] |