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Vgs (th) (Max) @ Id: | 3.9V @ 80µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Power Dissipation (Max): | 25W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | SP000013523 SPP02N60C3 SPP02N60C3IN SPP02N60C3IN-ND SPP02N60C3X SPP02N60C3XK SPP02N60C3XTIN SPP02N60C3XTIN-ND |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | SPP02N60C3HKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1 |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 1.8A TO-220AB |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.8A (Tc) |
Email: | [email protected] |