Købe SPP07N65C3HKSA1 med BYCHPS
Køb med garanti
SPP07N65C3HKSA1
- Varenummer:
- SPP07N65C3HKSA1
- Beskrivelse:
- MOSFET N-CH 650V 7.3A TO-220
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16663 Pieces
- Datablad:
- SPP07N65C3HKSA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SPP07N65C3HKSA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SPP07N65C3HKSA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.9V @ 350µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO220-3-1 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
| Power Dissipation (Max): | 83W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | SP000014631 SPP07N65C3 SPP07N65C3-ND SPP07N65C3IN SPP07N65C3IN-ND SPP07N65C3X SPP07N65C3XK |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SPP07N65C3HKSA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 790pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO220-3-1 |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 7.3A TO-220 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.3A (Tc) |
| Email: | [email protected] |
Relaterede dele til SPP07N65C3HKSA1
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
STP4NK80Z | STMicroelectronics | MOSFET N-CH 800V 3A TO-220 | Forespørgsel |
 |
SPP07N65C3XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Forespørgsel |
 |
SPP07N60CFDHKSA1 | Infineon Technologies | MOSFET N-CH 650V 6.6A TO-220 | Forespørgsel |
|
SPP07N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220AB | Forespørgsel |
|
SPP07N60S5HKSA1 | Infineon Technologies | LOW POWER_LEGACY | Forespørgsel |
|
SPP07N60S5XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Forespørgsel |
|
SPP07N60S5 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220AB | Forespørgsel |
|
SPP07N60C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220AB | Forespørgsel |
 |
STD90N4F3 | STMicroelectronics | MOSFET N-CH 40V 80A DPAK | Forespørgsel |
 |
IPB80P04P4L06ATMA1 | Infineon Technologies | MOSFET P-CH TO263-3 | Forespørgsel |
 |
TK16C60W,S1VQ | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers