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Vgs (th) (Max) @ Id: | 3.9V @ 350µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Power Dissipation (Max): | 83W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | SP000681038 SPP08N50C3 SPP08N50C3IN SPP08N50C3IN-ND SPP08N50C3X SPP08N50C3X-ND SPP08N50C3XK |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 8 Weeks |
Producentens varenummer: | SPP08N50C3XKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 750pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 560V 7.6A (Tc) 83W (Tc) Through Hole PG-TO220-3-1 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 560V |
Beskrivelse: | MOSFET N-CH 560V 7.6A TO-220AB |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.6A (Tc) |
Email: | [email protected] |