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Vgs (th) (Max) @ Id: | 5V @ 500µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 7A, 10V |
Power Dissipation (Max): | 125W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | SP000681042 SPP11N60CFD SPP11N60CFD-ND SPP11N60CFDIN SPP11N60CFDIN-ND SPP11N60CFDX SPP11N60CFDXK |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | SPP11N60CFDXKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1 |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 11A TO-220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11A (Tc) |
Email: | [email protected] |