Købe SPP20N60S5 med BYCHPS
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		| Vgs (th) (Max) @ Id: | 5.5V @ 1mA | 
|---|---|
| Teknologi: | MOSFET (Metal Oxide) | 
| Leverandør Device Package: | PG-TO220-3-1 | 
| Serie: | CoolMOS™ | 
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13A, 10V | 
| Power Dissipation (Max): | 208W (Tc) | 
| Emballage: | Tube | 
| Pakke / tilfælde: | TO-220-3 | 
| Andre navne: | SPP20N60S5BKSA1  SPP20N60S5IN SPP20N60S5X SPP20N60S5XTIN SPP20N60S5XTIN-ND  | 
| Driftstemperatur: | -55°C ~ 150°C (TJ) | 
| Monteringstype: | Through Hole | 
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) | 
| Producentens varenummer: | SPP20N60S5 | 
| Inputkapacitans (Ciss) (Max) @ Vds: | 3000pF @ 25V | 
| Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V | 
| FET Type: | N-Channel | 
| FET-funktion: | - | 
| Udvidet beskrivelse: | N-Channel 650V 20A (Tc) 208W (Tc) Through Hole PG-TO220-3-1 | 
| Afløb til Source Voltage (VDSS): | 650V | 
| Beskrivelse: | MOSFET N-CH 650V 20A TO-220AB | 
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20A (Tc) | 
| Email: | [email protected] |