Købe SPP80P06P H med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 4V @ 5.5mA |
---|---|
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 64A, 10V |
Power Dissipation (Max): | 340W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | SP000441774 SPP80P06P G SPP80P06P G-ND SPP80P06PH SPP80P06PHXKSA1 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | SPP80P06P H |
Inputkapacitans (Ciss) (Max) @ Vds: | 5033pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | P-Channel 60V 80A (Tc) 340W (Tc) Through Hole PG-TO220-3-1 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET P-CH 60V 80A TO-220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
Email: | [email protected] |