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Vgs (th) (Max) @ Id: | 3.9V @ 250µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO251-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 500mA, 10V |
Power Dissipation (Max): | 11W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Andre navne: | SP000012110 SPU01N60C3-ND SPU01N60C3BKMA1 SPU01N60C3IN SPU01N60C3X SPU01N60C3XK |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 8 Weeks |
Producentens varenummer: | SPU01N60C3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 0.8A TO-251 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 800mA (Tc) |
Email: | [email protected] |