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SQ2361ES-T1_GE3
- Varenummer:
- SQ2361ES-T1_GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 60V 2.5A SSOT23
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19366 Pieces
- Datablad:
- SQ2361ES-T1_GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SQ2361ES-T1_GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SQ2361ES-T1_GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Serie: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 177 mOhm @ 2.4A, 10V |
| Power Dissipation (Max): | 2W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-236-3, SC-59, SOT-23-3 |
| Andre navne: | SQ2361ES-T1-GE3 SQ2361ES-T1_GE3-ND SQ2361ES-T1_GE3TR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 18 Weeks |
| Producentens varenummer: | SQ2361ES-T1_GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 550pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET P-CH 60V 2.5A SSOT23 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.8A (Tc) |
| Email: | [email protected] |
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