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SQJ412EP-T1_GE3
- Varenummer:
- SQJ412EP-T1_GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 40V 32A PPAK SO-8
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19935 Pieces
- Datablad:
- SQJ412EP-T1_GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SO-8 |
| Serie: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 10.3A, 10V |
| Power Dissipation (Max): | 83W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® SO-8 |
| Andre navne: | SQJ412EP-T1-GE3 SQJ412EP-T1-GE3-ND SQJ412EP-T1-GE3TR SQJ412EP-T1-GE3TR-ND SQJ412EP-T1_GE3TR SQJ412EPT1GE3 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 18 Weeks |
| Producentens varenummer: | SQJ412EP-T1_GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5950pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 40V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8 |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET N-CH 40V 32A PPAK SO-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 32A (Tc) |
| Email: | [email protected] |
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