Købe SQJ912AEP-T1_GE3 med BYCHPS
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Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
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Leverandør Device Package: | PowerPAK® SO-8 Dual |
Serie: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 9.7A, 10V |
Strøm - Max: | 48W |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | PowerPAK® SO-8 Dual |
Andre navne: | SQJ912AEP-T1-GE3 SQJ912AEP-T1-GE3-ND SQJ912AEP-T1_GE3-ND SQJ912AEP-T1_GE3TR |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 18 Weeks |
Producentens varenummer: | SQJ912AEP-T1_GE3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1835pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
FET Type: | 2 N-Channel (Dual) |
FET-funktion: | Standard |
Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 40V 30A 48W Surface Mount PowerPAK® SO-8 Dual |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET 2N-CH 40V 30A PPAK SO-8 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30A |
Email: | [email protected] |