Købe SQM120N04-1M7_GE3 med BYCHPS
Køb med garanti
SQM120N04-1M7_GE3
- Varenummer:
- SQM120N04-1M7_GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 40V 120A TO263
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15703 Pieces
- Datablad:
- SQM120N04-1M7_GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SQM120N04-1M7_GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SQM120N04-1M7_GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-263 (D2Pak) |
| Serie: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 300W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | SQM120N04-1M7-GE3 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 18 Weeks |
| Producentens varenummer: | SQM120N04-1M7_GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 17350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 310nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 40V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D2Pak) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET N-CH 40V 120A TO263 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 120A (Tc) |
| Email: | [email protected] |
Relaterede dele til SQM120N04-1M7_GE3
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
SQM120N06-3M5L_GE3 | Vishay Siliconix | MOSFET N-CH 60V 120A TO-220 | Forespørgsel |
|
SQM120N04-1M9_GE3 | Vishay Siliconix | MOSFET N-CH 40V 120A TO263 | Forespørgsel |
|
SQM120N03-1M5L_GE3 | Vishay Siliconix | MOSFET N-CH 30V 120A TO-263 | Forespørgsel |
|
SQM120P04-04L_GE3 | Vishay Siliconix | MOSFET P-CH 40V 120A TO-263 | Forespørgsel |
|
SQM120N04-1M7L_GE3 | Vishay Siliconix | MOSFET N-CH 40V 120A TO263 | Forespørgsel |
|
SQM120P06-07L_GE3 | Vishay Siliconix | MOSFET P-CH 60V 120A TO263 | Forespørgsel |
 |
SQM120N10-3M8_GE3 | Vishay Siliconix | MOSFET N-CH 100V 120A TO263 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog