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SSM6K217FE,LF
- Varenummer:
- SSM6K217FE,LF
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 40V 1.8A ES6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15593 Pieces
- Datablad:
- SSM6K217FE,LF.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 1.2V @ 1mA |
|---|---|
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | ES6 |
| Serie: | U-MOSVII-H |
| Rds On (Max) @ Id, Vgs: | 195 mOhm @ 1A, 8V |
| Power Dissipation (Max): | 500mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | SOT-563, SOT-666 |
| Andre navne: | SSM6K217FE,LF(A SSM6K217FELFTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | SSM6K217FE,LF |
| Inputkapacitans (Ciss) (Max) @ Vds: | 130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.2V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 40V 1.8A (Ta) 500mW (Ta) Surface Mount ES6 |
| Drevspænding (Maks. Rds On, Min Rds On): | 1.8V, 8V |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET N-CH 40V 1.8A ES6 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.8A (Ta) |
| Email: | [email protected] |
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