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STW58N65DM2AG
- Varenummer:
- STW58N65DM2AG
- Fabrikant:
- ST
- Beskrivelse:
- MOSFET N-CH 650V 48A
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19701 Pieces
- Datablad:
- STW58N65DM2AG.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±25V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-247 |
| Serie: | Automotive, AEC-Q101, MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 24A, 10V |
| Power Dissipation (Max): | 360W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | 497-16137-5 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | STW58N65DM2AG |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4100pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 48A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 48A (Tc) |
| Email: | [email protected] |
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