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SUD35N10-26P-GE3
- Varenummer:
- SUD35N10-26P-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 100V 35A DPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16286 Pieces
- Datablad:
- SUD35N10-26P-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.4V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-252, (D-Pak) |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 12A, 10V |
| Power Dissipation (Max): | 8.3W (Ta), 83W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | SUD35N10-26P-GE3TR SUD35N1026PGE3 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 15 Weeks |
| Producentens varenummer: | SUD35N10-26P-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2000pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak) |
| Drevspænding (Maks. Rds On, Min Rds On): | 7V, 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 35A DPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 35A (Tc) |
| Email: | [email protected] |
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