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Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220AB |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.1 mOhm @ 22A, 10V |
Power Dissipation (Max): | 2.7W (Ta), 59.5W (Tc) |
Emballage: | Bulk |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | SUP50N03-5M1P-GE3CT SUP50N03-5M1P-GE3CT-ND SUP50N035M1PGE3 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | SUP50N03-5M1P-GE3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 2780pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 30V 50A (Tc) 2.7W (Ta), 59.5W (Tc) Through Hole TO-220AB |
Afløb til Source Voltage (VDSS): | 30V |
Beskrivelse: | MOSFET N-CH 30V 50A TO-220AB |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
Email: | [email protected] |