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TH58BYG2S3HBAI6
- Varenummer:
- TH58BYG2S3HBAI6
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- IC EEPROM 4GBIT 25NS 67FBGA
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14102 Pieces
- Datablad:
- TH58BYG2S3HBAI6.pdf
Introduktion
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specifikationer
| Spænding - Forsyning: | 1.7 V ~ 1.95 V |
|---|---|
| Leverandør Device Package: | 67-VFBGA (6.5x8) |
| Fart: | 25ns |
| Serie: | Benand™ |
| Emballage: | Tray |
| Pakke / tilfælde: | 67-VFBGA |
| Andre navne: | TH58BYG2S3HBAI6JDH TH58BYG2S3HBAI6YCL |
| Driftstemperatur: | -40°C ~ 85°C (TA) |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Hukommelsestype: | Non-Volatile |
| Hukommelsesstørrelse: | 4Gb (512M x 8) |
| Hukommelsesformat: | EEPROM |
| Producentens varenummer: | TH58BYG2S3HBAI6 |
| grænseflade: | Parallel |
| Beskrivelse: | IC EEPROM 4GBIT 25NS 67FBGA |
| Email: | [email protected] |
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