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TH58NYG3S0HBAI6
- Varenummer:
- TH58NYG3S0HBAI6
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- IC EEPROM 8GBIT 25NS 67VFBGA
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13389 Pieces
- Datablad:
- TH58NYG3S0HBAI6.pdf
Introduktion
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specifikationer
| Spænding - Forsyning: | 1.7 V ~ 1.95 V |
|---|---|
| Leverandør Device Package: | 67-VFBGA (6.5x8) |
| Fart: | 25ns |
| Serie: | - |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 67-VFBGA |
| Andre navne: | TH58NYG3S0HBAI6JDH |
| Driftstemperatur: | -40°C ~ 85°C (TA) |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Hukommelsestype: | Non-Volatile |
| Hukommelsesstørrelse: | 8Gb (1G x 8) |
| Hukommelsesformat: | EEPROM |
| Producentens varenummer: | TH58NYG3S0HBAI6 |
| grænseflade: | Parallel/Serial |
| Beskrivelse: | IC EEPROM 8GBIT 25NS 67VFBGA |
| Email: | [email protected] |
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