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TJ80S04M3L(T6L1,NQ
- Varenummer:
- TJ80S04M3L(T6L1,NQ
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET P-CH 40V 80A DPAK-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16045 Pieces
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DPAK+ |
| Serie: | U-MOSVI |
| Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 40A, 10V |
| Power Dissipation (Max): | 100W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | TJ80S04M3L(T6L1NQ TJ80S04M3LT6L1NQ |
| Driftstemperatur: | 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | TJ80S04M3L(T6L1,NQ |
| Inputkapacitans (Ciss) (Max) @ Vds: | 7770pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 158nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 40V 80A (Ta) 100W (Tc) Surface Mount DPAK+ |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET P-CH 40V 80A DPAK-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Ta) |
| Email: | [email protected] |
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