Købe TK30A06N1,S4X med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 4V @ 200µA |
---|---|
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220SIS |
Serie: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Power Dissipation (Max): | 25W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack, Isolated Tab |
Andre navne: | TK30A06N1,S4X(S TK30A06N1,S4X-ND TK30A06N1S4X |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | TK30A06N1,S4X |
Inputkapacitans (Ciss) (Max) @ Vds: | 1050pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 60V 30A (Tc) 25W (Tc) Through Hole TO-220SIS |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET N-CH 60V 30A TO-220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30A (Tc) |
Email: | [email protected] |