Købe TK31V60W5,LVQ med BYCHPS
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TK31V60W5,LVQ
- Varenummer:
- TK31V60W5,LVQ
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N -CH 600V 30.8A DFN
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17534 Pieces
- Datablad:
- TK31V60W5,LVQ.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 1.5mA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-DFN-EP (8x8) |
| Serie: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 109 mOhm @ 15.4A, 10V |
| Power Dissipation (Max): | 240W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 4-VSFN Exposed Pad |
| Andre navne: | TK31V60W5,LVQ(S TK31V60W5LVQTR |
| Driftstemperatur: | 150°C (TA) |
| Monteringstype: | Surface Mount |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TK31V60W5,LVQ |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3000pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N -CH 600V 30.8A DFN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30.8A (Ta) |
| Email: | [email protected] |
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