Købe TK39J60W,S1VQ med BYCHPS
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TK39J60W,S1VQ
- Varenummer:
- TK39J60W,S1VQ
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 600V 38.8A TO-3P
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18729 Pieces
- Datablad:
- TK39J60W,S1VQ.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.7V @ 1.9mA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3P(N) |
| Serie: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 19.4A, 10V |
| Power Dissipation (Max): | 270W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3P-3, SC-65-3 |
| Andre navne: | TK39J60W,S1VQ(O TK39J60WS1VQ |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | TK39J60W,S1VQ |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Super Junction |
| Udvidet beskrivelse: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 38.8A TO-3P |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 38.8A (Ta) |
| Email: | [email protected] |
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