Købe TK50P04M1(T6RSS-Q) med BYCHPS
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Vgs (th) (Max) @ Id: | 2.3V @ 500µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DP |
Serie: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 25A, 10V |
Power Dissipation (Max): | 60W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | TK50P04M1(T6RSSQ)TR TK50P04M1T6RSSQ |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | TK50P04M1(T6RSS-Q) |
Inputkapacitans (Ciss) (Max) @ Vds: | 2600pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 40V 50A (Ta) 60W (Tc) Surface Mount DP |
Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET N-CH 40V 50A DP TO252-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Ta) |
Email: | [email protected] |