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TK55D10J1(Q)
- Varenummer:
- TK55D10J1(Q)
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 100V 55A TO220W
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12357 Pieces
- Datablad:
- TK55D10J1(Q).pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.3V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220(W) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 27A, 10V |
| Power Dissipation (Max): | 140W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | TK55D10J1(Q) |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5700pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 55A (Ta) 140W (Tc) Through Hole TO-220(W) |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 55A TO220W |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 55A (Ta) |
| Email: | [email protected] |
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