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TK65G10N1,RQ
- Varenummer:
- TK65G10N1,RQ
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 100V 65A D2PAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12745 Pieces
- Datablad:
- TK65G10N1,RQ.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D2PAK |
| Serie: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 32.5A, 10V |
| Power Dissipation (Max): | 156W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | TK65G10N1RQDKR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TK65G10N1,RQ |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5400pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 65A (Ta) 156W (Tc) Surface Mount D2PAK |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 65A D2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 65A (Ta) |
| Email: | [email protected] |
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