Købe TPH2R306NH,L1Q med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 1mA |
---|---|
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-SOP Advance (5x5) |
Serie: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 30A, 10V |
Power Dissipation (Max): | 1.6W (Ta), 78W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-PowerVDFN |
Andre navne: | TPH2R306NH,L1Q(M TPH2R306NHL1QTR |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 16 Weeks |
Producentens varenummer: | TPH2R306NH,L1Q |
Inputkapacitans (Ciss) (Max) @ Vds: | 6100pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5) |
Drevspænding (Maks. Rds On, Min Rds On): | 6.5V, 10V |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET N CH 60V 60A SOP ADV |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 60A (Tc) |
Email: | [email protected] |