Købe TPN2R503NC,L1Q med BYCHPS
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Vgs (th) (Max) @ Id: | 2.3V @ 500µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-TSON Advance (3.3x3.3) |
Serie: | U-MOSVIII |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 20A, 10V |
Power Dissipation (Max): | 700mW (Ta), 35W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-PowerVDFN |
Andre navne: | TPN2R503NC,L1Q(M TPN2R503NCL1Q TPN2R503NCL1QTR |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 16 Weeks |
Producentens varenummer: | TPN2R503NC,L1Q |
Inputkapacitans (Ciss) (Max) @ Vds: | 2230pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 30V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
Afløb til Source Voltage (VDSS): | 30V |
Beskrivelse: | MOSFET N CH 30V 40A 8TSON-ADV |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 40A (Ta) |
Email: | [email protected] |