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2N6661JAN02
- Varenummer:
- 2N6661JAN02
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 90V 0.86A TO-205
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 18884 Pieces
- Datablad:
- 2N6661JAN02.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-39 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1A, 10V |
| Power Dissipation (Max): | 725mW (Ta), 6.25W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-205AD, TO-39-3 Metal Can |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | 2N6661JAN02 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39 |
| Afløb til Source Voltage (VDSS): | 90V |
| Beskrivelse: | MOSFET N-CH 90V 0.86A TO-205 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 860mA (Tc) |
| Email: | [email protected] |
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