Købe C3M0280090J-TR med BYCHPS
Køb med garanti
C3M0280090J-TR
- Varenummer:
- C3M0280090J-TR
- Fabrikant:
- Cree
- Beskrivelse:
- MOSFET N-CH 900V 11A
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16983 Pieces
- Datablad:
- C3M0280090J-TR.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for C3M0280090J-TR, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til C3M0280090J-TR via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 1.2mA |
|---|---|
| Vgs (Max): | +18V, -8V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | D2PAK-7 |
| Serie: | C3M™ |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 7.5A, 15V |
| Power Dissipation (Max): | 50W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Andre navne: | C3M0280090J-TRTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | C3M0280090J-TR |
| Inputkapacitans (Ciss) (Max) @ Vds: | 150pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 15V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 900V 11A (Tc) 50W (Tc) Surface Mount D2PAK-7 |
| Drevspænding (Maks. Rds On, Min Rds On): | 15V |
| Afløb til Source Voltage (VDSS): | 900V |
| Beskrivelse: | MOSFET N-CH 900V 11A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11A (Tc) |
| Email: | [email protected] |
Relaterede dele til C3M0280090J-TR
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
C3M0280090J | Cree/Wolfspeed | MOSFET N-CH 900V 11A | Forespørgsel |
 |
C3M0280090D | Cree/Wolfspeed | MOSFET N-CH 900V 11.5A | Forespørgsel |
 |
IXTY1N120P | IXYS | MOSFET N-CH 1200V 1A TO-252 | Forespørgsel |
 |
FDP51N25 | Fairchild/ON Semiconductor | MOSFET N-CH 250V 51A TO-220 | Forespørgsel |
 |
IRF734PBF | Vishay Siliconix | MOSFET N-CH 450V 4.9A TO-220AB | Forespørgsel |
|
SIHP15N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 15A TO220AB | Forespørgsel |
 |
BUK9880-55,135 | NXP USA Inc. | MOSFET N-CH 55V 7.5A SOT223 | Forespørgsel |
 |
IRFR3710ZTRLPBF | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | Forespørgsel |
 |
IXFX210N17T | IXYS | MOSFET N-CH 170V 210A PLUS247 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog