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DMG4N60SJ3
- Varenummer:
- DMG4N60SJ3
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET NCH 600V 3A TO251
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15367 Pieces
- Datablad:
- DMG4N60SJ3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Leverandør Device Package: | TO-251 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
| Strøm - Max: | 41W |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Long Leads, IPak, TO-251AB |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | DMG4N60SJ3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 532pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
| FET Type: | MOSFET N-Channel, Metal Oxide |
| FET-funktion: | Standard |
| Udvidet beskrivelse: | Mosfet Array MOSFET N-Channel, Metal Oxide 600V 3A (Tc) 41W Through Hole TO-251 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET NCH 600V 3A TO251 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3A (Tc) |
| Email: | [email protected] |
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