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DMG4N65CT
- Varenummer:
- DMG4N65CT
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET N CH 650V 4A TO220-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19962 Pieces
- Datablad:
- DMG4N65CT.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for DMG4N65CT, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til DMG4N65CT via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220-3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2A, 10V |
| Power Dissipation (Max): | 2.19W (Ta) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | DMG4N65CTDI |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | DMG4N65CT |
| Inputkapacitans (Ciss) (Max) @ Vds: | 900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 4A (Tc) 2.19W (Ta) Through Hole TO-220-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N CH 650V 4A TO220-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4A (Tc) |
| Email: | [email protected] |
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