Købe FQPF9P25YDTU med BYCHPS
Køb med garanti
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220F-3 (Y-Forming) |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 620 mOhm @ 3A, 10V |
| Power Dissipation (Max): | 50W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 Full Pack, Formed Leads |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | FQPF9P25YDTU |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1180pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 250V |
| Beskrivelse: | MOSFET P-CH 250V 6A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |