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Vgs (th) (Max) @ Id: | 5V @ 250µA |
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Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220F-3 (Y-Forming) |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 3A, 10V |
Power Dissipation (Max): | 50W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack, Formed Leads |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 6 Weeks |
Producentens varenummer: | FQPF9P25YDTU |
Inputkapacitans (Ciss) (Max) @ Vds: | 1180pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming) |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 250V |
Beskrivelse: | MOSFET P-CH 250V 6A |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |