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H7N1002LS-E
- Varenummer:
- H7N1002LS-E
- Fabrikant:
- Renesas Electronics America
- Beskrivelse:
- MOSFET N-CH 100V LDPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16301 Pieces
- Datablad:
- H7N1002LS-E.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | - |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-LDPAK |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 37.5A, 10V |
| Power Dissipation (Max): | 100W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | SC-83 |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | H7N1002LS-E |
| Inputkapacitans (Ciss) (Max) @ Vds: | 9700pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 75A (Ta) 100W (Tc) Surface Mount 4-LDPAK |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V LDPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 75A (Ta) |
| Email: | [email protected] |
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