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IPB031NE7N3GATMA1
- Varenummer:
- IPB031NE7N3GATMA1
- Beskrivelse:
- MOSFET N-CH 75V 100A TO263-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12330 Pieces
- Datablad:
- IPB031NE7N3GATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPB031NE7N3GATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPB031NE7N3GATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.8V @ 155µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-3-2 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 214W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | IPB031NE7N3 G IPB031NE7N3 G-ND IPB031NE7N3 GTR-ND IPB031NE7N3G SP000641730 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | IPB031NE7N3GATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 8130pF @ 37.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 75V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2 |
| Afløb til Source Voltage (VDSS): | 75V |
| Beskrivelse: | MOSFET N-CH 75V 100A TO263-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
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