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IPB039N10N3GE8187ATMA1
- Varenummer:
- IPB039N10N3GE8187ATMA1
- Beskrivelse:
- MOSFET N-CH 100V 160A TO263-7
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16056 Pieces
- Datablad:
- IPB039N10N3GE8187ATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPB039N10N3GE8187ATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPB039N10N3GE8187ATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 160µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-7 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 214W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Andre navne: | IPB039N10N3 G E8187 IPB039N10N3 G E8187-ND IPB039N10N3 G E8187TR-ND SP000939340 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | IPB039N10N3GE8187ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 8410pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 160A TO263-7 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 160A (Tc) |
| Email: | [email protected] |
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